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    工藝能力

     

    • Minimum Pattern : ~0.35um( i line )
    • Deep trench technology : ~10um
    • Furnace process : ~1200℃
    • Implanter process : ~200KeV, (400KeV)
    • Life time control Technology : FRD, FRMOS.
    • Various barrier material for SBD : Ni, Pt, NiPt, NiCrPt, …
    • Various Films : Poly Crystal, USG, PSG, BPSG, TEOS Oxide, Nitride, PIQ…
    • Front metal : Ti, TiN, Aluminum. …..
    • Grinder Process : ~100um
    • Back metal : Ti, Ni, Ag ….
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